发明名称 |
Light emitting element, light emitting element array, optical writing head, and image forming apparatus |
摘要 |
A light emitting element includes a semiconductor substrate, and an island structure formed on the semiconductor substrate. The island structure includes a light-emitting-unit thyristor and a current confinement structure. The light-emitting-unit thyristor includes stacked semiconductor layers having a pnpn structure. The current confinement structure includes a high-resistance region and a conductive region, and confines carriers in the conductive region. |
申请公布号 |
US9059362(B2) |
申请公布日期 |
2015.06.16 |
申请号 |
US201313841513 |
申请日期 |
2013.03.15 |
申请人 |
FUJI XEROX CO., LTD. |
发明人 |
Kinoshita Taku;Kondo Takashi;Takeda Kazutaka;Nakayama Hideo |
分类号 |
H01L29/06;H01L33/14;B41J2/45;G03G15/04;H01L33/00 |
主分类号 |
H01L29/06 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. A light emitting element comprising:
a semiconductor substrate; and an island structure formed on the semiconductor substrate, the island structure including
a light-emitting thyristor including stacked semiconductor layers having a pnpn structure, the pnpn structure having an anode layer provided on the semiconductor substrate, a n-type gate layer provided on the anode layer, a p-type gate layer provided on the n-type gate layer, and a cathode layer provided on the p-type gate layer, anda current confinement structure,the current confinement structure being provided in the anode layer and including a high-resistance region and a conductive region, and confining carriers in the conductive region; andwherein the anode layer comprises a first anode layer and a second anode layer, and the current confinement structure is provided between the first anode layer and the second anode layer, wherein the current confinement structure is provided directly below the first anode layer, and wherein the current confinement structure is provided directly above the second anode layer. |
地址 |
Tokyo JP |