Methods of forming integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regions

摘要

Integrated circuit capacitors have composite dielectric layers therein. These composite dielectric layers include crystallization inhibiting regions that operate to increase the overall crystallization temperature of the composite dielectric layer. An integrated circuit capacitor includes first and second capacitor electrodes and a capacitor dielectric layer extending between the first and second capacitor electrodes. The capacitor dielectric layer includes a composite of a first dielectric layer extending adjacent the first capacitor electrode, a second dielectric layer extending adjacent the second capacitor electrode and an electrically insulating crystallization inhibiting layer extending between the first and second dielectric layers. The electrically insulating crystallization inhibiting layer is formed of a material having a higher crystallization temperature characteristic relative to the first and second dielectric layers.

主权项

1. A method of forming a capacitor of an integrated circuit device, the method comprising:
forming a lower electrode on a substrate, wherein the lower electrode is a metal nitride layer; forming a first hafnium oxide layer directly contacting an upper surface of the metal nitride layer; forming an aluminum oxide layer on the first hafnium oxide layer; forming a second hafnium oxide layer on the aluminum oxide layer, wherein the aluminum oxide layer is disposed between the first and second hafnium oxide layers; and forming an upper electrode directly contacting an upper surface of the second hafnium oxide layer, wherein the aluminum oxide layer has a thickness smaller than at least one of thicknesses of the first and second hafnium oxide layers.