Dual channel hybrid semiconductor-on-insulator semiconductor devices

摘要

Trenches are formed through a top semiconductor layer and a buried insulator layer of a semiconductor-on-insulator (SOI) substrate. A selective epitaxy is performed to form bulk semiconductor portions filling the trenches and in epitaxial alignment with the semiconductor material of a handle substrate. At least one dielectric layer is deposited over the top semiconductor layer and the bulk semiconductor portions, and is patterned to form openings over selected areas of the top semiconductor layer and the bulk semiconductor portions. A semiconductor alloy material is deposited within the openings directly on physically exposed surfaces of the top semiconductor layer and the bulk semiconductor portions. The semiconductor alloy material intermixes with the underlying semiconductor materials in a subsequent anneal. Within each of the SOI region and the bulk region, two types of semiconductor material portions are formed depending on whether a semiconductor material intermixes with the semiconductor alloy material.

主权项

1. A method of forming a semiconductor structure comprising:
forming at least one trench through a top semiconductor layer and a buried insulator layer of a semiconductor-on-insulator (SOI) substrate, said top semiconductor layer containing a first semiconductor material; forming at least one epitaxial semiconductor portion containing a second semiconductor material in said at least one trench; forming at least one dielectric layer including a first opening over a remaining portion of said top semiconductor layer and a second opening over a portion of said at least one epitaxial semiconductor portion; depositing a semiconductor alloy material on physically exposed surfaces of said first semiconductor material and said second semiconductor material within said first and second openings, wherein said semiconductor alloy material comprises another semiconductor material that is different from said first semiconductor material and said second semiconductor material; and simultaneously forming an SOT portion comprising an alloy of said first semiconductor material and said another semiconductor material and an epitaxial semiconductor alloy portion comprising an alloy of said second semiconductor material and said another semiconductor material by diffusion of said semiconductor alloy material into underlying semiconductor materials.