FinFET device

摘要

A method for forming a field effect transistor device includes patterning an arrangement of fin portions on a substrate, patterning a gate stack portion over portions of the fin portions and the substrate, growing an epitaxial material from the fin portions that electrically connects portions of adjacent fin structures, and removing a portion of the gate stack portion to expose a portion of the substrate.

主权项

1. A field effect transistor device comprising:
an arrangement of fin portions disposed on a substrate; a first gate stack portion and a second gate stack portion arranged over the arrangement of fin portions and portions of the substrate; a spacer, comprising a single material, formed over and adjacent to the first and second gate stack portions so as to completely cover top, side and edge surfaces of the first and second gate stack portions; an oxide layer formed over the spacer and over exposed portions of the fin portions; a first epitaxial material connecting portions of the fin portions arranged in a first region defined by a first side of the first gate stack portion; a second epitaxial material connecting portions of the fin portions arranged in a second region defined by a second side of the first gate stack portion; and the second gate stack portion arranged substantially collinear to the first gate stack portion, the first gate stack portion and the second gate stack portion partially defined by an exposed region of the substrate arranged between the first gate stack portion and the second gate stack portion.