Integrated circuit diode

摘要

A method includes forming isolation regions in a semiconductor substrate to define a first field effect transistor (FET) region, a second FET region, and a diode region, forming a first gate stack in the first FET region and a second gate stack in the second FET region, forming a layer of spacer material over the second FET region and the second gate stack, forming a first source region and a first drain region in the first FET region and a first diode layer in the diode region using a first epitaxial growth process, forming a hardmask layer over the first source region, the first drain region, the first gate stack and a portion of the first diode layer, and forming a second source region and a second drain region in the first FET region and a second diode layer on the first diode layer using a second epitaxial growth process.

主权项

1. A semiconductor device, comprising:
isolation regions formed in a semiconductor substrate to define a first field effect transistor (FET) region, a second FET region, and a diode region; a first gate stack formed in the first FET region and a second gate stack formed in the second FET region; a first epitaxial source region and a first epitaxial drain region formed in the first FET region and a first epitaxial diode layer formed in the diode region; and a second epitaxial source region and a second epitaxial drain region formed in the second FET region and a second epitaxial diode layer formed on the first epitaxial diode layer.