发明名称 PHOTORESIST AND METHOD
摘要 Shrinkage and mass losses are reduced in photoresist exposure and post exposure baking by utilizing a small group which will decompose. Alternatively a bulky group which will not decompose or a combination of the small group which will decompose along with the bulky group which will not decompose can be utilized. Additionally, polar functional groups may be utilized in order to reduce the diffusion of reactants through the photoresist.
申请公布号 KR20150066481(A) 申请公布日期 2015.06.16
申请号 KR20140174083 申请日期 2014.12.05
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHANG CHING YU;LAI WEI HAN
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
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