METHODS OF FORMING IMPURITY REGIONS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES

摘要

A method for forming impurity domains includes: a step of sequentially forming a first protective film, a mask film, a second protective film, and a photoresist film on a substrate; a step of forming a photoresist pattern by partially removing the photoresist film; a step of forming an ion injection mask including the first protective pattern, the mask film pattern, the second protective film pattern, and the photoresist pattern sequentially layered on the substrate by etching the second protective film, the mask film, the first protective film in sequence by using the photoresist pattern; and a step of injecting impurities on the upper part of the substrate which is exposed by the ion injection mask. Uniform impurity domains can be acquired by using a dual-layer ion injection mask.