发明名称 |
METHOD FOR FABRICATING PRECISION LAYER SILICON-OVER-OXIDE SEMICONDUCTOR STRUCTURE |
摘要 |
Semiconductor structure having a support structure with a layer of single crystal material carried by the support structure and a layer of epitaxially grown single crystal semiconductor material adherent to the first named layer of semiconductor material to provide a combination layer having a relatively precise thickness throughout in which circuit devices can be fabricated.
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申请公布号 |
US3869321(A) |
申请公布日期 |
1975.03.04 |
申请号 |
US19730373940 |
申请日期 |
1973.06.27 |
申请人 |
SIGNETICS CORPORATION |
发明人 |
DAVIS, STANLEY R. |
分类号 |
H01L21/00;H01L21/74;H01L21/761;(IPC1-7):H01L7/36;H01L27/04 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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