Laterally injected light-emitting diode and laser diode

摘要

A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

主权项

1. A laterally-injected light-emitting device, comprising:
a p-type superlattice layer having a slanted end facet; an III-nitride multiple quantum well active layer deposited on the slanted end facet for laterally injecting holes from the p-type superlattice layer thereinto; and an n-type layer for injecting electrons into the III-nitride multiple quantum well active layer, thereby generating light emission from the active layer when the electrons and holes combine.