Processing method and storage medium

摘要

Disclosed is a processing method that removes moisture in a low permittivity film formed on a substrate to be processed which has a damaged layer on the surface thereof while maintaining the specific permittivity or a leakage current value low when the film is subjected to a recovery processing. The method for the recovery processing includes applying, on the damaged layer of the low permittivity film, a first processing gas whose molecules are small sufficient to permeate the inside of the damaged layer of the low permittivity film and which is able to remove the moisture in the damaged layer and a second processing gas which forms a hydrophobic dense reformatted layer on the surface of the damaged layer, thereby allowing the first processing gas and the second processing gas to react with the damaged layer.

主权项

1. A processing method for performing a recovery processing on a damaged layer of a low permittivity film that is formed on a substrate to be processed and has a plurality of pores inside the damaged layer, the method comprising:
applying, on the damaged layer of the low permittivity film formed on the substrate disposed in a processing chamber, a first processing gas containing dimethyl carbonate (DMC) and having molecules smaller than the pores inside the damaged layer to permeate the inside of the damaged layer of the low permittivity film such that the first processing gas causes a dehydration reaction in the plurality of pores inside the damaged layer, thereby removing moisture in the plurality of pores inside the damaged layer by forming dehydrated products in the plurality of pores inside the damaged layer with the first processing gas applied in a gas state; and after removing the moisture in the damaged layer by the first processing gas, applying, on the surface of the damaged layer of the low permittivity film, a second processing gas containing a silylating agent such as N-trimethylsilyldimethylamine (TMSDMA) such that the second processing gas reacts with the surface of the damaged layer to form a hydrophobic dense reformed layer only on the surface of the damaged layer with the second processing gas applied in a gas state, thereby recovering the damaged layer.