Cross-point memory compensation

摘要

The apparatuses and methods described herein may operate to measure a voltage difference between a selected access line and a selected sense line associated with a selected cell of a plurality of memory cells of a memory array. The voltage difference may be compared with a reference voltage specified for a memory operation. A selection voltage(s) applied to the selected cell for the memory operation may be adjusted responsive to the comparison, such as to dynamically compensate for parasitic voltage drop.

主权项

1. An apparatus, comprising:
a memory array including a plurality of memory cells; and a compensator to measure a voltage difference between a selected access line and a selected sense line associated with a selected cell of the plurality of memory cells for each memory operation, the measured voltage difference to include a voltage drop at a location of each of the plurality of memory cells due to a parasitic voltage drop for each of an access line and a sense line at a respective cross-point associated with the selected cell, the compensator further to compare the measured voltage difference at the selected cell with a reference voltage specified for a memory operation and dynamically to adjust a selection voltage to be applied to the selected cell for the memory operation based on the measured voltage difference for each of the plurality of memory cells responsive to the comparison.