Subscribed is a semiconductor device. It includes a gate pattern formed on a substrate; and a first spacer formed on the lateral side of the gate pattern. The first spacer includes a first upper spacer and a first lower spacer which are vertically arranged to lateral sides. The dielectric constant of the first upper spacer is higher than that of the first lower spacer.
申请公布号
KR20150065483(A)
申请公布日期
2015.06.15
申请号
KR20130150856
申请日期
2013.12.05
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, JIN BUM;KOO, BON YOUNG;KIM, SEOK HOON;KIM, CHUL;LEE, KWAN HEUM;LEE, BYEONG CHAN;JUNG, SU JIN