| 摘要 |
<p>The present invention aims to provide: an indium-zinc-oxide-based semiconductor ink composition wherein a spontaneous combustion reaction occurs; and an inorganic semiconductor thin film produced by using the same. The semiconductor ink composition includes nitrate of metal A, which is an oxidation material, and a complex, represented by Chemical formula 1, of metal B, which is a fuel material. The metal A and the metal B are one kind of metal selected from a group consisting of indium, gallium, zinc, titanium, aluminum, lithium and zirconium. The metal A and the metal B are different from each other. According to the present invention, the semiconductor ink composition and the inorganic semiconductor thin film can be used as a channel material of a transistor device. Therefore, an inorganic thin film transistor with enhanced electrical performance can be manufactured. Moreover, the semiconductor ink composition is proper for a solution process. Therefore, the semiconductor ink composition can be manufactured into a thin film in an easy manner and can be processed at low temperatures. The semiconductor ink composition is used to manufacture a dense and uniform thin film by the spontaneous combustion reaction occurring when two metal precursors wherein the fuel material and the oxidation material are coordinated are mixed. Accordingly, the inorganic thin film transistor with excellent reliability can be manufactured.</p> |
