发明名称 |
HIGH DENSITY METAL INSULATOR METAL TRENCH CAPACITOR WITH CONCAVE SURFACES |
摘要 |
<p>Higher capacitance density is achieved by increasing a surface area of a capacitor. A larger surface area may be obtained by forming isotropic ball shapes (a concave surface) in the trenches on the semiconductor die. The concave surfaces are fabricated by depositing bilayers of amorphous silicon and silicon oxide. Openings are patterned in the silicon oxide hard mask for trenches. The openings are transferred to the amorphous silicon layers through isotropic etching to form concave surfaces. Conducting insulating and conducting layers are deposited on the concave surfaces of the trenches by atomic layer deposition.</p> |
申请公布号 |
IN1542MUN2013(A) |
申请公布日期 |
2015.06.12 |
申请号 |
IN2013MU01542 |
申请日期 |
2013.08.12 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
LAN JE HSIUNG;NOWAK MATTHEW MICHAEL;GOUSEV EVGENI P.;KIM JONGHAE;CHUI CLARENCE |
分类号 |
H01L21/02;H01G4/012;H01L29/94 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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