HIGH ELECTRON MOBILITY TRANSISTOR AND ELECTRONIC APPARATUS COMPRISING THE SAME

摘要

Disclosed are a high electron mobility transistor and an electronic apparatus comprising the same. The high electron mobility transistor may include a channel layer formed on the first surface of a substrate, a channel supply layer, a gate structure, a source and a drain, and a capacitor structure connected to the second surface of the substrate. Thereby, the substrate is grounded. The capacitor structure may include an insulating layer.