| 摘要 |
<p>The present invention relates to a side light emitting diode and a manufacturing method thereof. Manufactured is the side light emitting diode including: a substrate which has a first surface and a second surface facing the first surface; a first reflection layer located on the first surface of the substrate; a semiconductor stack structure which includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, and is located on the second surface of the substrate; and a second reflection layer located on the semiconductor stack structure. Therefore, the side light emitting diode having high side light extraction efficiency and a backlight unit including the same, and a surface light source can be provided.</p> |
