| 摘要 |
Disclosed are a semiconductor device package and a method of manufacturing the same. The semiconductor device package may include a first lead frame having a heat radiation element, a second lead frame combined with the first frame, and an insulator formed between them. A structure where the first lead frame is combined with the second lead frame can provide a loading region. A semiconductor chip element can be formed on the loading region. The semiconductor chip element can be loaded on the loading region by a flip chip method. The insulator can be formed with resin. Epoxy molding compound (EMC) for covering the semiconductor chip element is also provided. Part of the heating element is not covered by the EMC and can be exposed. |
