发明名称 ANNULAR BAFFLE FOR PUMPING FROM ABOVE A PLANE OF THE SEMICONDUCTOR WAFER SUPPORT
摘要 <p>A system and a method for processing a substrate in a processing chamber and providing an azimuthally evenly distributed bleed-out on the processing byproducts using a gas pump down source coupled to the processing chamber above the plane of a substrate support within the processing chamber. The process chamber can include an annular plenum disposed between a support surface plane and the chamber top. The annular plenum includes: at least one vacuum inlet port coupled to the gas pump down source; and a continuous inlet gap proximate to a perimeter of the substrate support. The continuous inlet gap has an inlet gas flow resistance of between about twice to about twenty times an outlet gas flow resistance of the vacuum inlet port.</p>
申请公布号 KR20150065165(A) 申请公布日期 2015.06.12
申请号 KR20140173012 申请日期 2014.12.04
申请人 LAM RESEARCH CORPORATION 发明人 SHAREEF IQBAL;AGARWAL PIYUSH;AUGUSTINO JASON;FISCHER ANDREAS
分类号 H01L21/02;H01L21/683 主分类号 H01L21/02
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