| 摘要 |
<p>A semiconductor device including a conductive layer structure with copper includes a bottom interlayer dielectric layer, a stopper layer, and a top interlayer dielectric layer which are successively stacked on a substrate. A first bottom conductive layer and a second bottom conductive layer are separately provided on the bottom interlayer dielectric layer. Provided are a first top via plug which passes through the top interlayer dielectric layer and the stopper layer and is connected to a first bottom conductive layer and a second top via plug which is connected to a second bottom conductive layer. Provided is at least one line type shield via plug which passes through the interlayer dielectric layer and the stopper layer between the first top via plug and the second top via plug and is extended in the bottom interlayer dielectric layer. The shield via plug is electrically floated.</p> |
