A METHOD FOR PRODUCING A REDUCED REVERSE LEAKAGE CURRENT TRENCHED SCHOTTKY DIODE

摘要

The method comprises forming a trench structure (100), forming a gate electrode inside the trench through gate oxidation (200); forming a polysilicon gate (300); forming a pre-metal dielectric layer (400); forming a polysilicon recess (1000) in the polysilicon gate; depositing a transitional metal layer (450); forming metal silicide layer (500) through rapid thermal annealing; conducting chemical cleaning to remove unreacted metallic layer on the gate oxide (2000) and conducting second thermal rapid annealing (3000).