发明名称 METHOD FOR FABRICATING LIGHT-EMITTING DIODE DEVICE
摘要 The invention provides a method for fabricating a light-emitting diode device. The method includes providing a carrier having a first surface and a second surface. The first surface has insulating micro patterns. A buffer layer, a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer are grown on the first surface to form a light-emitting lamination layer. A substrate is provided for the second-type semiconductor layer to bond on. The carrier is lifted off from the light-emitting lamination layer by a laser lift-off process, and surfaces of the insulating micro patterns and a surface of the barrier layer between the insulating micro patterns are exposed. The insulating micro patterns and the barrier layer are removed. Recess structures are formed on the first-type semiconductor layer. A surface-roughing process is then performed on the recess structures.
申请公布号 US2015162496(A1) 申请公布日期 2015.06.11
申请号 US201414281750 申请日期 2014.05.19
申请人 LEXTAR ELECTRONICS CORPORATION 发明人 CHEN Jun-Rong
分类号 H01L33/22;H01L33/00 主分类号 H01L33/22
代理机构 代理人
主权项 1. A method for fabricating a light-emitting diode device, comprising: providing a carrier having a first surface and a second surface on opposite sides of the carrier, wherein the first surface has a plurality of insulating micro patterns, and wherein the carrier and the plurality of insulating micro patterns are formed by different materials; growing a buffer layer, a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer on the first surface of the carrier in sequence to form a light-emitting lamination layer; providing a substrate for the second-type semiconductor layer of the light-emitting lamination layer to bond on; performing a laser lift-off process to lift off the carrier from the light-emitting lamination layer, and surfaces of the plurality of insulating micro patterns and a surface of the barrier layer between the plurality of insulating micro patterns are exposed; removing the plurality of insulating micro patterns and the barrier layer to form a plurality of recess structures on the first-type semiconductor layer; and performing a surface-roughing process on a plurality of surfaces of the plurality of recess structures.
地址 Hsinchu TW