发明名称 |
METHOD FOR FABRICATING LIGHT-EMITTING DIODE DEVICE |
摘要 |
The invention provides a method for fabricating a light-emitting diode device. The method includes providing a carrier having a first surface and a second surface. The first surface has insulating micro patterns. A buffer layer, a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer are grown on the first surface to form a light-emitting lamination layer. A substrate is provided for the second-type semiconductor layer to bond on. The carrier is lifted off from the light-emitting lamination layer by a laser lift-off process, and surfaces of the insulating micro patterns and a surface of the barrier layer between the insulating micro patterns are exposed. The insulating micro patterns and the barrier layer are removed. Recess structures are formed on the first-type semiconductor layer. A surface-roughing process is then performed on the recess structures. |
申请公布号 |
US2015162496(A1) |
申请公布日期 |
2015.06.11 |
申请号 |
US201414281750 |
申请日期 |
2014.05.19 |
申请人 |
LEXTAR ELECTRONICS CORPORATION |
发明人 |
CHEN Jun-Rong |
分类号 |
H01L33/22;H01L33/00 |
主分类号 |
H01L33/22 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method for fabricating a light-emitting diode device, comprising:
providing a carrier having a first surface and a second surface on opposite sides of the carrier, wherein the first surface has a plurality of insulating micro patterns, and wherein the carrier and the plurality of insulating micro patterns are formed by different materials; growing a buffer layer, a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer on the first surface of the carrier in sequence to form a light-emitting lamination layer; providing a substrate for the second-type semiconductor layer of the light-emitting lamination layer to bond on; performing a laser lift-off process to lift off the carrier from the light-emitting lamination layer, and surfaces of the plurality of insulating micro patterns and a surface of the barrier layer between the plurality of insulating micro patterns are exposed; removing the plurality of insulating micro patterns and the barrier layer to form a plurality of recess structures on the first-type semiconductor layer; and performing a surface-roughing process on a plurality of surfaces of the plurality of recess structures. |
地址 |
Hsinchu TW |