发明名称 DYNAMIC CASCODE-MANAGED HIGH-VOLTAGE WORD-LINE DRIVER CIRCUIT
摘要 A method of operation of a high-voltage word-line driver circuit for a memory device prevents any single transistor of the driver from having the full power supply voltage from which the word-line output signal is generated, from being applied across any single transistor of the word-line driver circuit. A pair of cascode devices are connected in series with the pull-down device of the input stage and a pull-up device of the input stage, and biased using reference voltages to control the maximum voltage drop across the pull-down device when the pull-down device is off and the pull-up device is active, and to control the maximum voltage drop across the pull-up device when the pull-down device is active. The output stage also includes cascode devices that protect the output pull-down and pull-up devices, and the reference voltages that bias the input and output cascode pairs may be the same reference voltages.
申请公布号 US2015162059(A1) 申请公布日期 2015.06.11
申请号 US201414300617 申请日期 2014.06.10
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 Fredeman Gregory J.;Mathews Abraham;Plass Donald W.;Reyer Kenneth J.
分类号 G11C7/12 主分类号 G11C7/12
代理机构 代理人
主权项 1. A method of operation of a dynamic logic driver circuit, the method comprising: receiving an input logic signal; pre-charging an evaluation node of the dynamic driver circuit with a first one of a plurality of transistors forming an input logic stack having source and drain terminals connected in series between a power supply voltage and a power supply return voltage; evaluating the input logic signal with the input logic stack by providing the input logic signal to a gate of a second one of the plurality of transistors and selectively discharging the evaluation node in response to a first state of the input logic signal; first preventing failure of a given one of the first transistor or the second transistor by biasing a third one of the first plurality of transistors with a first reference voltage between the power supply voltage and the power supply return voltage, so that the third transistor forms a cascode follower that prevents a leakage current within the input logic stack from causing a full difference between the power supply voltage and the power supply return voltage from being applied across a given one of the first transistor or the second transistor; and generating a buffered output signal from a state of the evaluation node, wherein a first voltage swing of the buffered output signal is substantially greater than a second voltage swing of the input logic signal.
地址 Armonk NY US