Precursors for Atomic Layer Deposition

摘要

Atomic layer deposition (ALD) and chemical vapor deposition (CVD) precursors that are useful for forming metal-containing films are provided. These compounds include triazapentadienyl, α-imino enolate compounds and α-imino ketone compounds having formulae 1, 2, and 3, respectively. An ALD method using the precursors is also provided.

主权项

1. A compound having formula (I): wherein:
M is a metal selected from groups 2 to 12 of the Periodic Table;R1 is C1-8 alkyl, C5-12 aryl, or NR5R6;R2 is C1-8alkyl;R3, R4 are each independently hydrogen or C1-8alkyl; andR5, R6 are each independently C1-8 alkyl with the proviso that when M is Cr, R5 is C2-8 alkyl.