发明名称 |
Precursors for Atomic Layer Deposition |
摘要 |
Atomic layer deposition (ALD) and chemical vapor deposition (CVD) precursors that are useful for forming metal-containing films are provided. These compounds include triazapentadienyl, α-imino enolate compounds and α-imino ketone compounds having formulae 1, 2, and 3, respectively. An ALD method using the precursors is also provided. |
申请公布号 |
US2015159273(A1) |
申请公布日期 |
2015.06.11 |
申请号 |
US201314407238 |
申请日期 |
2013.06.11 |
申请人 |
WAYNE STATE UNIVERSITY |
发明人 |
Winter Charles H.;Kalutarage Lakmal C. |
分类号 |
C23C16/455;C07C251/12;C23C16/18;C01B21/06;C22B23/00;C22B15/00;C07C251/76;C01B13/14 |
主分类号 |
C23C16/455 |
代理机构 |
|
代理人 |
|
主权项 |
1. A compound having formula (I): wherein:
M is a metal selected from groups 2 to 12 of the Periodic Table;R1 is C1-8 alkyl, C5-12 aryl, or NR5R6;R2 is C1-8alkyl;R3, R4 are each independently hydrogen or C1-8alkyl; andR5, R6 are each independently C1-8 alkyl with the proviso that when M is Cr, R5 is C2-8 alkyl. |
地址 |
Detroit MI US |