PACKAGING STRUCTURE OF A MICROELECTRONIC DEVICE HAVING A HERMETICITY IMPROVED BY A DIFFUSION BARRIER LAYER

摘要

Packaging structure (100) comprising: -at least one hermetically sealed cavity (102) in which at least one microelectronic device (104) is arranged, the cavity being formed between a substrate (106) and at least one cap layer (108) through which at least one release hole (110) is formed, -at least one portion of metallic material (120) arranged on the cap layer and hermetically plugging the release hole, -at least one diffusion barrier layer (114) comprising at least one non- metallic material, arranged on the cap layer and forming a diffusion barrier against an atmosphere outside the cavity at least around the release hole.