| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of raising a silicon single crystal in which effects of stress acting in a single crystal during raising of the single crystal are taken into consideration and a defective-free crystal can be precisely raised. ! SOLUTION: A single crystal raising device is used which has a water cooling body 11 arranged to surround a single crystal 8 being raised, and also has a heat shield body 10 arranged to enclose an outer peripheral surface and a lower end surface of the water cooling body 11, and during raising of the single crystal 8 having a diameter of 300 mm, the single crystal is lifted nearby a solid-liquid interface of the single crystal 8 under a condition where an expression (a) of 0.9×A≤Gc/Ge≤1.1×A holds for a ratio Gc/Ge, where a lifting axis-directional temperature gradient is Ge at an outer peripheral part of the single crystal 8 and Gc at the center part, and A is 0.1769×Gc+0.5462. ! COPYRIGHT: (C)2015,JPO&INPIT |
