SEMICONDUCTOR DEVICE

摘要

In order to inhibit a crack under a pad opening without increasing a chip size, a protective film (6) includes a pad opening (9) that exposes a part of a topmost layer metal film (3). The pad opening (9) is rectangular and square, and has an opening width of d0. A second metal film (2) has an opening under the pad opening (9). The opening is rectangular and square, and has an opening width of d4. A distance between an opening edge of the protective film (6) and an opening edge of the second metal film (2) is d3. The second metal film (2) has a rectangular donut shape, and protrudes to an inner side of the pad opening (9) by the distance d3.

主权项

1. A semiconductor device having a pad structure comprising a plurality of metal films, the semiconductor device comprising:
a semiconductor substrate; a first insulating film formed on a surface of the semiconductor substrate; a first metal film formed on the first insulating film; a second insulating film formed on the first metal film; a first part of the second metal film formed on the second insulating film; a first via formed in the second insulating film to connect the first metal film and the first part of the second metal film; a third insulating film formed on the first part of the second metal film; a topmost layer metal film formed on the third insulating film; a second via formed in the third insulating film to connect the first part of the second metal film and the topmost layer metal film; and a protective film formed on the topmost layer metal film and having a pad opening formed therein to expose a part of a surface of the topmost layer metal film, the first part of the second metal film having a rectangular donut shape and having an opening under the pad opening, the opening being located outside a beveled corner at a tip of a capillary for a ball bonder used for ball bonding, the first part of the second metal film protruding to an inner side of the pad opening by a predetermined amount of protrusion.