METHODS FOR FORMING CONDUCTIVE TITANIUM OXIDE THIN FILMS

摘要

The present disclosure relates to the deposition of conductive titanium oxide films by atomic layer deposition processes. Amorphous doped titanium oxide films are deposited by ALD processes comprising titanium oxide deposition cycles and dopant oxide deposition cycles and are subsequently annealed to produce a conductive crystalline anatase film. Doped titanium oxide films may also be deposited by first depositing a doped titanium nitride thin film by ALD processes comprising titanium nitride deposition cycles and dopant nitride deposition cycles and subsequently oxidizing the nitride film to form a doped titanium oxide film. The doped titanium oxide films may be used, for example, in capacitor structures.

主权项

1. A method for forming a capacitor in an integrated circuit, comprising:
depositing a bottom electrode; depositing a conductive titanium oxide layer doped with a group V metal by ALD over the bottom electrode; depositing an ultra-high-k layer directly over and contacting the titanium oxide layer; and depositing a top electrode directly over and contacting the ultra-high-k layer.