METHOD FOR THE FORMATION OF A FINFET DEVICE WITH EPITAXIALLY GROWN SOURCE-DRAIN REGIONS HAVING A REDUCED LEAKAGE PATH

摘要

Elongated fins of a first semiconductor material are insulated from and formed over an underlying substrate layer (of either SOI or bulk type). Elongated gates of a second semiconductor material are then formed to cross over the elongated fins at channel regions, and the gate side walls are covered by sidewall spacers. A protective material is provided to cover the underlying substrate layer and define sidewall spacers on side walls of the elongated fins between the elongated gates. The first semiconductor material and insulating material of the elongated fins located between the protective material sidewall spacers (but not under the elongated gates) is removed to form trenches aligned with the channel regions. Additional semiconductor material is then epitaxially grown inside each trench between the elongated gates to form source-drain regions adjacent the channel regions formed by the elongated fins of the first semiconductor material located under the elongated gates.

主权项

1. A method, comprising:
forming a plurality of elongated fins of a first semiconductor material insulated from an underlying substrate material by an insulating material; forming plurality of elongated gates of a second semiconductor material which extend to cross over the plurality of elongated fins; forming sidewall spacers on side walls of the elongated gates; forming a protective material covering the underlying substrate layer and defining sidewall spacers on side walls of the elongated fins between the elongated gates; removing the first semiconductor material and insulating material of the elongated fins located between but not under the elongated gates to form a plurality of trenches between the protective material sidewall spacers which each expose the underlying substrate material; and epitaxially growing additional semiconductor material inside each trench between the elongated gates to form source-drain regions that are adjacent channels formed by the elongated fins of the first semiconductor material located under the elongated gates.