METAL OXIDE SEMICONDUCTOR FILM, THIN-FILM TRANSISTOR, DISPLAY DEVICE, IMAGE SENSOR, AND X-RAY SENSOR

摘要

The present invention provides a metal oxide semiconductor film containing at least indium as a metal component, and satisfying relational expression (1), given that the indium concentration in the film is DI (atoms/cm3), and the hydrogen concentration in the film is DH (atoms/cm3). The present invention further provides a device provided with the same. 0.1≤DH/DI≤1.8 (1)