发明名称 ELECTROSTATIC PROTECTION CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT APPARATUS
摘要 The following are included: a series circuit that is connected between a first node and a second node and includes an impedance element and a capacitor connected to each other by a third node; a first transistor that is connected between the first node and a fourth node and turns on in accordance with an increase in voltage generated in the impedance element; a voltage divider circuit that divides voltage between the fourth node and the second node; a second transistor that turns on in accordance with an increase in the divided voltage and increases current flowing in the impedance element; a detection circuit that activates an output signal upon detection of an on state of the second transistor; and a discharge circuit that allows current to flow from the first node to the second node when the output signal of the detection circuit is activated.
申请公布号 US2015162745(A1) 申请公布日期 2015.06.11
申请号 US201414561717 申请日期 2014.12.05
申请人 Seiko Epson Corporation 发明人 IKEDA Masuhide
分类号 H02H9/04 主分类号 H02H9/04
代理机构 代理人
主权项 1. An electrostatic protection circuit that is connected via a first node to a first terminal to which a first potential is supplied, and is connected via a second node to a second terminal to which a second potential lower than the first potential is supplied, the electrostatic protection circuit comprising: a first impedance element, one end thereof being connected to one of the first node and the second node, and the other end thereof being connected to a third node; a capacitor, one end thereof being connected to the third node, and the other end thereof being connected to the other of the first node and the second node; a first transistor that is connected between the one of the first node and the second node and a fourth node, and is placed in an electrically conductive state in accordance with an increase in voltage generated at both ends of the first impedance element; a voltage divider circuit that includes a second impedance element and a third impedance element and divides voltage between the other of the first node and the second node and the fourth node, the second impedance element being connected between the fourth node and a fifth node, and the third impedance element being connected between the other of the first node and the second node and the fifth node; a second transistor that is placed in an electrically conductive state in accordance with an increase in voltage generated at both ends of the third impedance element; a detection circuit that activates an output signal upon detection of the electrically conductive state of the second transistor; and a discharge circuit that is connected between the first node and the second node, and allows current to flow from the first node to the second node when the output signal of the detection circuit is activated.
地址 Tokyo JP