SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a reliable semiconductor device which is arranged by use of an oxide semiconductor and small in electric property variation, and which enables the enhancement of an electric property.SOLUTION: A semiconductor device comprises: a first dielectric film, of which the desorption amount of hydrogen molecules at an arbitrary temperature of 400°C or higher is equal to or less than 130% of that of hydrogen molecules at 300°C in a temperature-rising desorbed gas spectroscopic analysis; a first barrier film on the first dielectric film; a second dielectric film located on the first barrier film and having a region including oxygen more than oxygen enough to satisfy a stoichiometric composition; and a first transistor located on the second dielectric film, and including a first oxide semiconductor film.