发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor storage device which can stably operate even when centralized access to the same row address occurs. ! SOLUTION: A memory 100 includes: a memory array 150; a precharge control part 111 which controls precharge of a memory cell; a row decoder 123 which outputs row selection signals for specifying row addresses of a plurality of memory cells; an integration circuit 160 which integrates the signal levels of the row selection signals for the same row address and has integral characteristics in which the integrated value of signal levels becomes a predetermined value when the row selection signals for the same row address are consecutively outputted in the predetermined number of times; and a determination part 170 which determines whether or not the integrated value of the integration circuit is equal to or greater than the predetermined value. The precharge control part 111 turns off the precharge of the memory cell when the determination part 170 determines t
申请公布号 JP2015109125(A) 申请公布日期 2015.06.11
申请号 JP20130251075 申请日期 2013.12.04
申请人 FUJITSU LTD 发明人 ABE HITOSHI ; ISHIBASHI OSAMU ; MIYAZAKI SADAO
分类号 G11C11/4094 主分类号 G11C11/4094
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