| 发明名称 |
NON-VOLATILE MEMORY DEVICE HAVING INCREASED MEMORY CAPACITY |
| 摘要 |
A non-volatile memory device according to an embodiment of the present invention includes a first memory layer including a plurality of memory cells stacked between a first conductive line and a second conductive line over a semiconductor substrate. In addition, a second memory layer including the plurality of memory cells stacked between the second conductive line and a third conductive line. Further, the second memory layer is extended over the page buffer and the peripheral circuit sequentially arranged from the first memory layer. |
| 申请公布号 |
US2015162341(A1) |
申请公布日期 |
2015.06.11 |
| 申请号 |
US201414230619 |
申请日期 |
2014.03.31 |
| 申请人 |
SK HYNIX INC. |
发明人 |
ARITOME Seiichi |
| 分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A non-volatile memory device, comprising:
a first memory layer including a plurality of memory cells stacked between a first conductive line and a second conductive line over a semiconductor substrate; a second memory layer including a plurality of memory cells stacked between the second conductive line and a third conductive line; and a page buffer and a peripheral circuit sequentially arranged from the first memory layer, wherein the second memory layer is extended over the page buffer and the peripheral circuit. |
| 地址 |
Icheon-si KR |
