发明名称 Array Based Fabrication of Power Semiconductor Package with Integrated Heat Spreader
摘要 In one implementation, a method of fabricating a power semiconductor package is disclosed. The method includes providing a conductive carrier array including a plurality of power modules held together with connecting bars, where each of the plurality of power modules includes a control transistor, a sync transistor, and a driver IC. The method further includes overlying on the conductive carrier array a heat spreader array including a plurality of power electrode heat spreaders such that each of the plurality of power electrode heat spreaders couples a drain of the sync transistor to a source of the control transistor in each power module.
申请公布号 US2015162303(A1) 申请公布日期 2015.06.11
申请号 US201414546854 申请日期 2014.11.18
申请人 International Rectifier Corporation 发明人 Cho Eung San
分类号 H01L23/00;H01L27/06;H01L23/34;H01L27/088 主分类号 H01L23/00
代理机构 代理人
主权项 1. A method of fabricating a power semiconductor package, said method comprising: providing a conductive carrier array including a plurality of power modules held together with connecting bars; each of said plurality of power modules including a control transistor, a sync transistor, and a driver IC; overlying on said conductive carrier array a heat spreader array including a plurality of power electrode heat spreaders such that each of said plurality of power electrode heat spreaders couples a drain of said sync transistor to a source of said control transistor in each power module.
地址 El Segundo CA US