发明名称 |
Array Based Fabrication of Power Semiconductor Package with Integrated Heat Spreader |
摘要 |
In one implementation, a method of fabricating a power semiconductor package is disclosed. The method includes providing a conductive carrier array including a plurality of power modules held together with connecting bars, where each of the plurality of power modules includes a control transistor, a sync transistor, and a driver IC. The method further includes overlying on the conductive carrier array a heat spreader array including a plurality of power electrode heat spreaders such that each of the plurality of power electrode heat spreaders couples a drain of the sync transistor to a source of the control transistor in each power module. |
申请公布号 |
US2015162303(A1) |
申请公布日期 |
2015.06.11 |
申请号 |
US201414546854 |
申请日期 |
2014.11.18 |
申请人 |
International Rectifier Corporation |
发明人 |
Cho Eung San |
分类号 |
H01L23/00;H01L27/06;H01L23/34;H01L27/088 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
|
主权项 |
1. A method of fabricating a power semiconductor package, said method comprising:
providing a conductive carrier array including a plurality of power modules held together with connecting bars; each of said plurality of power modules including a control transistor, a sync transistor, and a driver IC; overlying on said conductive carrier array a heat spreader array including a plurality of power electrode heat spreaders such that each of said plurality of power electrode heat spreaders couples a drain of said sync transistor to a source of said control transistor in each power module. |
地址 |
El Segundo CA US |