| 发明名称 |
ETCHING METHOD |
| 摘要 |
An etching method is provided for performing an etching process on an etching target film arranged on a substrate. The etching method includes the steps of supplying a treatment gas including a halogen-containing gas, hydrogen gas, an inert gas, and oxygen gas; performing a treatment on a patterned mask arranged on the etching target film using a plasma generated from the treatment gas; and etching the etching target film that has undergone the treatment using a plasma generated from an etching gas. |
| 申请公布号 |
US2015162202(A1) |
申请公布日期 |
2015.06.11 |
| 申请号 |
US201414555826 |
申请日期 |
2014.11.28 |
| 申请人 |
Tokyo Electron Limited |
发明人 |
YOSHIDA Ryoichi |
| 分类号 |
H01L21/3065;H01L21/311;H01L21/3213 |
主分类号 |
H01L21/3065 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An etching method for performing an etching process on an etching target film arranged on a substrate, the etching method comprising the steps of:
supplying a treatment gas including a halogen-containing gas, hydrogen gas, an inert gas, and oxygen gas, and performing a treatment on a patterned mask arranged on the etching target film using a plasma generated from the treatment gas; and etching the etching target film that has undergone the treatment using a plasma generated from an etching gas. |
| 地址 |
Tokyo JP |
