| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a NAND type semiconductor storage device capable of a high-speed operation.SOLUTION: A semiconductor storage device of the present invention includes: a memory array in which a plurality of NAND type memory cells are formed; row selection means that selects a memory cell in a row direction of the memory array; column selection means that selects a memory cell in a column direction of the memory array; and control means that performs reading of data from the memory cell or writing of data to the memory cell. In the memory array, a plurality of cell units, each of which includes a data memory cell for storing data and a reference memory cell for storing reference data in pairs, are formed. The control means executes a read operation or write operation for a cell unit selected by the row selection means or column selection means.</p> |
