| 发明名称 |
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE |
| 摘要 |
The present disclosure includes a first substrate including a first wiring layer having a first connection electrode projecting by a predetermined quantity from a first interlayer insulation film and a second wiring layer having a second connection electrode projecting by a predetermined quantity from a second interlayer insulation film. On a bonded surface between the first and second substrates, the first and second connection electrodes are joined with each other, and at the same time, at least a part of the first interlayer insulation film and a part of the second interlayer insulation film which face to each other in a lamination direction are joined with each other. |
| 申请公布号 |
US2015162371(A1) |
申请公布日期 |
2015.06.11 |
| 申请号 |
US201314407198 |
申请日期 |
2013.06.11 |
| 申请人 |
SONY CORPORATION |
发明人 |
Fujii Nobutoshi;Aoyagi Kenichi |
| 分类号 |
H01L27/146;H04N5/225 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first substrate configured to include a first interlayer insulation film and a first wiring layer having a first connection electrode projecting by a predetermined quantity from the first interlayer insulation film; and a second substrate configured to include a second interlayer insulation film and a second wiring layer having a second connection electrode projecting by a predetermined quantity from the second interlayer insulation film, wherein the second connection electrode is bonded on the first substrate so as to join with the first connection electrode, and the second connection electrode is joined with the first connection electrode and at the same time at least a part of the first interlayer insulation film and a part of the second interlayer insulation film are joined with each other on the bonded surface. |
| 地址 |
Tokyo JP |
