发明名称 SPUTTER DEPOSITION METHOD, SPUTTERING SYSTEM, MANUFACTURE OF PHOTOMASK BLANK, AND PHOTOMASK BLANK
摘要 A film is sputter deposited on a substrate by providing a vacuum chamber (3) with first and second targets (1, 2) such that the sputter surfaces (11, 21) of the first and second targets (1, 2) may face the substrate (5) and be arranged parallel or oblique to each other, simultaneously supplying electric powers to the first and second targets (1, 2), and depositing sputtered particles on the substrate while controlling sputtering conditions such that the rate at which sputtered particles ejected from one target reach the sputter surface of the other target and deposit thereon is not more than the rate at which the sputtered particles are removed from the other target by sputtering.
申请公布号 US2015159264(A1) 申请公布日期 2015.06.11
申请号 US201414561311 申请日期 2014.12.05
申请人 Shin-Etsu Chemical Co., Ltd. 发明人 SASAMOTO Kouhei;FUKAYA Souichi;NAKAGAWA Hideo;INAZUKI Yukio
分类号 C23C14/34;H01J37/34;G03F1/68 主分类号 C23C14/34
代理机构 代理人
主权项 1. A method for sputter depositing a film on a substrate, comprising the steps of: providing a vacuum chamber with first and second targets such that the surfaces of the first and second targets to be sputtered may face a substrate to be coated and be arranged parallel or oblique to each other, simultaneously supplying electric powers to the first and second targets, and depositing sputtered particles on the substrate while controlling sputtering conditions of the first and second targets such that the rate at which sputtered particles ejected from one target reach the sputter surface of the other target and deposit thereon is not more than the rate at which the sputtered particles are removed from the other target by sputtering thereof.
地址 Tokyo JP