| 发明名称 |
MEMORY DEVICE SUPPORTING BOTH CACHE MODE AND MEMORY MODE, AND OPERATING METHOD OF THE SAME |
| 摘要 |
A method of operating a memory device that includes at least one sub-memory supporting a cache mode and a memory mode, the method including receiving a mode change signal instructing the memory device to change an operation mode of the at least one sub-memory from the cache mode to the memory mode; and changing the operation mode of the at least one sub-memory from the cache mode to the memory mode without flushing the at least one sub-memory, according to the mode change signal. |
| 申请公布号 |
US2015161052(A1) |
申请公布日期 |
2015.06.11 |
| 申请号 |
US201414478039 |
申请日期 |
2014.09.05 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
SEONG Nak Hee |
| 分类号 |
G06F12/08 |
主分类号 |
G06F12/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of operating a memory device which includes at least one sub-memory supporting a cache mode and a memory mode, the method comprising:
receiving a mode change signal instructing the memory device to change an operation mode of the at least one sub-memory from the cache mode to the memory mode; and changing the operation mode of the at least one sub-memory from the cache mode to the memory mode without flushing the at least one sub-memory, according to the mode change signal. |
| 地址 |
Suwon-Si KR |
