| 发明名称 |
INTERFUSED NANOCRYSTALS AND METHOD OF PREPARING THE SAME |
| 摘要 |
Disclosed herein is a nanocrystal comprising a core comprising a first nanocrystal material, the first nanocrystal material including a Group II-VI semiconductor compound or a Group III-V semiconductor compound; a shell being disposed upon a surface of the core and comprising a second nanocrystal material, the second nanocrystal material being different from the first nanocrystal material and including a Group II-VI semiconductor compound or a Group III-V semiconductor compound; and an alloy interlayer disposed between the core and the shell, wherein the emission peak wavelength of the nanocrystal is shifted into a shorter wavelength than the emission peak wavelength of the core. |
| 申请公布号 |
US2015159083(A1) |
申请公布日期 |
2015.06.11 |
| 申请号 |
US201514614475 |
申请日期 |
2015.02.05 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUN Shin Ae;JANG Eun Joo;CHOI Seong Jae |
| 分类号 |
C09K11/02;H01L33/30;H01L33/24;H01L33/28;H01L33/00;H01L33/06 |
主分类号 |
C09K11/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A nanocrystal comprising:
a core comprising a first nanocrystal material, the first nanocrystal material including a Group II-VI semiconductor compound or a Group III-V semiconductor compound; a shell being disposed upon a surface of the core and comprising a second nanocrystal material, the second nanocrystal material being different from the first nanocrystal material and including a Group II-VI semiconductor compound or a Group III-V semiconductor compound; and an alloy interlayer disposed between the core and the shell, wherein the emission peak wavelength of the nanocrystal is shifted into a shorter wavelength than the emission peak wavelength of the core. |
| 地址 |
Suwon-si KR |
