发明名称 |
NON-LEAD DIELECTRIC THIN FILM, COMPOSITION FOR FORMING THIS FILM, AND METHOD FOR FORMING THIS FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide a non-lead dielectric thin film free from lead, and having high crystal orientation and high relative dielectric constant.SOLUTION: A non-lead dielectric thin film is controlled in (111) orientation by including at least two components of a component of BaTiO, a component of Bi(MgTi)Oand a component of BiFeO, or controlled in (100) orientation by including at least two components of a component of BaTiO, a component of Bi(MgTi)Oand a component of BiFeO. The non-lead dielectric thin film is formed on (111)SrRuOor on (100)LaNiO. |
申请公布号 |
JP2015107905(A) |
申请公布日期 |
2015.06.11 |
申请号 |
JP20140172455 |
申请日期 |
2014.08.27 |
申请人 |
MITSUBISHI MATERIALS CORP;TOKYO INSTITUTE OF TECHNOLOGY |
发明人 |
SAKURAI HIDEAKI;FUJII JUN;SOYAMA NOBUYUKI;FUNAKUBO HIROSHI;SHIMIZU TAKAO;KIMURA JUNICHI |
分类号 |
C30B29/32;C01G23/00;C01G29/00;C01G49/00;C04B35/468;C30B28/04;C30B29/22;H01B3/00;H01B3/12;H01G4/12;H01G4/33;H01L21/316;H01L41/187 |
主分类号 |
C30B29/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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