发明名称 SEMICONDUCTOR DEVICE
摘要 To improve reliability of a semiconductor device obtained through a dicing step. In a ring region, a first outer ring is provided outside a seal ring, and a second outer ring is provided outside the first outer ring. This can prevent a crack from reaching even the seal ring that exists in the ring region, for example, when a scribe region located outside the ring region is cut off by a dicing blade.
申请公布号 US2015162284(A1) 申请公布日期 2015.06.11
申请号 US201514626331 申请日期 2015.02.19
申请人 RENESAS ELECTRONICS CORPORATION 发明人 ISHII Yasushi
分类号 H01L23/00;H01L23/58 主分类号 H01L23/00
代理机构 代理人
主权项 1. A semiconductor device comprising: (a) a semiconductor substrate including a circuit region in which an integrated circuit is formed; (b) a seal ring formed over the semiconductor substrate so as to surround the integrated circuit in plan view, the seal ring formed of a first multi-layered metal wirings; (c) a first insulating film formed over the semiconductor substrate so as to cover an uppermost wiring of the first multi-layered metal wirings; and (d) a first outer ring formed over the semiconductor substrate so as to surround the seal ring in plan view, the first outer ring formed of a second multi-layered metal wirings, wherein a lowermost wiring of the first multi-layered metal wirings is electrically coupled with the semiconductor substrate, wherein a lowermost wiring of the second multi-layered metal wirings is not electrically coupled with the semiconductor substrate, wherein the first insulating film has a first edge in outer region of the seal ring, wherein the first outer ring is positioned on an outer side than the first edge, and wherein an uppermost wiring of the second multi-layered metal wirings is positioned in a position lower than the uppermost wiring of the first multi-layered metal wirings in a thickness direction of the semiconductor substrate.
地址 Kanagawa JP