| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A semiconductor device includes a first isolation layer formed in a trench in a substrate. The isolation layer includes a first oxide layer formed in the trench and a second oxide layer formed over the first oxide layer, wherein the first oxide layer and the second oxide layer have a same composition. |
| 申请公布号 |
US2015162237(A1) |
申请公布日期 |
2015.06.11 |
| 申请号 |
US201514626567 |
申请日期 |
2015.02.19 |
| 申请人 |
SK hynix Inc. |
发明人 |
KIM Jae-Soo;KIM Hyung-Kyun |
| 分类号 |
H01L21/762;H01L27/108;H01L21/02 |
主分类号 |
H01L21/762 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating an isolation layer, comprising:
forming a trench in a substrate; forming a first oxide layer in the trench; and forming a second oxide layer by oxidizing the first oxide layer. |
| 地址 |
Gyeonggi-do KR |
