| 发明名称 |
SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS |
| 摘要 |
A substrate treatment method for treating a substrate including a first silicon nitride film provided on a front surface thereof and a silicon oxide film provided on the first silicon nitride film to remove the first silicon nitride film and the silicon oxide film from the substrate includes: a first phosphoric acid treatment step of supplying a phosphoric acid aqueous solution having a predetermined first concentration to the substrate held by a substrate holding unit to treat the substrate with the first concentration phosphoric acid aqueous solution for the removal of the first silicon nitride film; and a second phosphoric acid treatment step of supplying a phosphoric acid aqueous solution having a second concentration lower than the first concentration to the substrate to treat the substrate with the second concentration phosphoric acid aqueous solution for the removal of the silicon oxide film after the first phosphoric acid treatment step. |
| 申请公布号 |
US2015162224(A1) |
申请公布日期 |
2015.06.11 |
| 申请号 |
US201414564620 |
申请日期 |
2014.12.09 |
| 申请人 |
SCREEN Holdings Co., Ltd. |
发明人 |
HINODE Taiki;OTA Takashi;SAITO Kazuhide |
| 分类号 |
H01L21/67;H01L21/311;H01L29/66 |
主分类号 |
H01L21/67 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A substrate treatment method for treating a substrate including a first silicon nitride film provided on a front surface thereof and a silicon oxide film provided on the first silicon nitride film to remove the first silicon nitride film and the silicon oxide film from the substrate, the method comprising:
a first phosphoric acid treatment step of causing a substrate holding unit to hold the substrate and supplying a phosphoric acid aqueous solution having a predetermined first concentration to the substrate held by the substrate holding unit to treat the substrate with the first concentration phosphoric acid aqueous solution for the removal of the first silicon nitride film; and a second phosphoric acid treatment step of supplying a phosphoric acid aqueous solution having a second concentration lower than the first concentration to the substrate to treat the substrate with the second concentration phosphoric acid aqueous solution for the removal of the silicon oxide film after the first phosphoric acid treatment step. |
| 地址 |
Kyoto JP |
