METHOD FOR ETCHING TARGET LAYER OF SEMICONDUCTOR DEVICE IN ETCHING APPARATUS

摘要

A method for etching a target layer of a semiconductor device in an etching apparatus is provided. To form an element, the method includes forming a photoresist pattern on the target layer of the semiconductor device, in which the photoresist pattern has an after-develop-inspection critical dimension (ADI CD). A target after-etch-inspection critical dimension (AEI CD) of the element is provided, as well as a trim time of the target layer. The etching apparatus is provided and a formation time of a protective layer on an inner wall of the etching apparatus is determined based on the ADI CD, the target AEI CD and the trim time. The protective layer for the predetermined formation time is formed to perform a trimming process on the target layer for the trim time by using the photoresist pattern as a mask, so as to form the element.

主权项

1. A method for etching a target layer of a semiconductor device in an etching apparatus to form an element, the method comprising:
forming a photoresist pattern on the target layer of the semiconductor device, wherein the photoresist pattern has an after-develop-inspection critical dimension (ADI CD); providing a target after-etch-inspection critical dimension (AEI CD) of the element; providing a trim time of the target layer; providing the etching apparatus; determining a formation time of a protective layer on an inner wall of the etching apparatus based on the ADI CD, the target AEI CD and the trim time; forming the protective layer for the predetermined formation time; and is performing a trimming process on the target layer for the trim time by using the photoresist pattern as a mask to form the element.