发明名称 |
FABRICATION OF THIN-FILM ELECTRONIC DEVICES WITH NON-DESTRUCTIVE WAFER REUSE |
摘要 |
Thin-film electronic devices such as LED devices and field effect transistor devices are fabricated using a non-destructive epitaxial lift-off technique that allows indefinite reuse of a growth substrate. The method includes providing an epitaxial protective layer on the growth substrate and a sacrificial release layer between the protective layer and an active device layer. After the device layer is released from the growth substrate, the protective layer is selectively etched to provide a newly exposed surface suitable for epitaxial growth of another device layer. The entire thickness of the growth substrate is preserved, enabling continued reuse. Inorganic thin-film device layers can be transferred to a flexible secondary substrate, enabling formation of curved inorganic optoelectronic devices. |
申请公布号 |
WO2015084868(A1) |
申请公布日期 |
2015.06.11 |
申请号 |
WO2014US68197 |
申请日期 |
2014.12.02 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF MICHIGAN |
发明人 |
FORREST, STEPHEN, R.;LEE, KYUSANG |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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