POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a power semiconductor device having excellent heat radiation performance and high short-circuit withstanding capability; and provide a method of manufacturing the power semiconductor device.SOLUTION: A power semiconductor device 100 comprises a lead frame 1 and a power semiconductor element 3 bonded to the lead frame 1 by using a solder 2. A recessed region which is defined by a frame-like bank member 4 and the like and filled with the solder 2 is provided on a surface of the lead frame 1 which is in a plane of the power semiconductor element 3 in a planar view. The power semiconductor device 100 is manufactured by the steps of: supplying a molten solder to the recessed region; and mounting the power semiconductor element 3 on the lead frame 1 so as to cover the recessed region.