发明名称 ELECTRO-STATIC DISCHARGE PROTECTION CIRCUIT AND LIQUID CRYSTAL DISPLAY
摘要 An electro-static discharge protection circuit for a liquid crystal display is disclosed. In response to positive electro-static charges being generated on the signal line, a thin film transistor with a gate electrode connected to the high level signal line is switched on, and the positive electro-static charges are discharged through the switched on thin film transistor. In addition, in response to negative electro-static charges being generated on the signal line, a thin film transistor with a gate electrode connected to the low level signal line is switched on, and the negative electro-static charges are discharged through the switched on thin film transistor.
申请公布号 US2015160522(A1) 申请公布日期 2015.06.11
申请号 US201414222108 申请日期 2014.03.21
申请人 Tianma Micro-Electronics Co., Ltd. ;Xiamen Tianma Micro-Electronics Co., Ltd. 发明人 WU Hao;Xia Jun
分类号 G02F1/1362;H02H9/04 主分类号 G02F1/1362
代理机构 代理人
主权项 1. An electro-static discharge protection circuit for a liquid crystal display, wherein the liquid crystal display comprises a signal line, a low level signal line and a high level signal line, and the electro-static discharge protection circuit comprises: a first thin film transistor, wherein a drain/source electrode and a source/drain electrode of the first thin film transistor are respectively connected to the signal line and to the low level signal line; a second thin film transistor, wherein a drain/source electrode and a source/drain electrode of the second thin film transistor are respectively connected to the signal line and to the high level signal line; a third thin film transistor, wherein a drain/source electrode and a source/drain electrode of the third thin film transistor are respectively connected to the signal line and to the low level signal line, and a high level signal is provided to a gate electrode of the third thin film transistor; and a fourth thin film transistor, wherein a drain/source electrode and a source/drain electrode of the fourth thin film transistor are respectively connected to the signal line and to the high level signal line, and a low level signal is provided to a gate electrode of the fourth thin film transistor, wherein in response to positive electro-static charges being generated on the signal line, a thin film transistor with a gate electrode connected to the high level signal line is switched on, and the positive electro-static charges are discharged through the switched on thin film transistor, wherein a voltage corresponding to the positive electro-static charges is higher than a voltage of the high level signal line, and in response to negative electro-static charges being generated on the signal line, a thin film transistor with a gate electrode connected to the low level signal line is switched on, and the negative electro-static charges are discharged through the switched on thin film transistor, wherein a voltage corresponding to the negative electro-static charges is lower than a voltage of the low level signal line.
地址 Shenzhen CN