| 摘要 |
<p>A semiconductor device according to the present invention comprises a first laminate having first conductive patterns and first interlayer insulation films alternately laminated; a second laminate formed on an upper part of the first laminate, and having second conductive patterns and second interlayer insulation films alternately laminated; an interface pattern formed between the first laminate and the second laminate; first penetration areas penetrating the first laminate and the interface pattern, and including a first protrusion part protruding toward side wall of the interface pattern; second penetration areas penetrating the second laminate, and connected to the first penetration areas; and penetration structures formed along the side wall of the first and second penetration areas.</p> |
