| 发明名称 |
METHOD FOR FORMING A SEMICONDUCTOR DEVICE |
| 摘要 |
A method for forming a semiconductor device includes forming an electrical structure at a main surface of a semiconductor substrate and carrying out an anodic oxidation of a back side surface region of a back side surface of the semiconductor substrate to form an oxide layer at the back side surface of the semiconductor substrate. |
| 申请公布号 |
US2015162418(A1) |
申请公布日期 |
2015.06.11 |
| 申请号 |
US201314102290 |
申请日期 |
2013.12.10 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Meiser Andreas;Mauder Anton;Zundel Markus;Schulze Hans-Joachim;Hirler Franz;Weber Hans |
| 分类号 |
H01L29/66;H01L21/02;H01L21/306;H01L29/06 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a semiconductor device, the method comprising:
forming an electrical structure at a main surface of a semiconductor substrate; and carrying out an anodic oxidation of a back side surface region of a back side surface of the semiconductor substrate to form an oxide layer at the back side surface of the semiconductor substrate. |
| 地址 |
Neubiberg DE |
